i, ij nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 power field effect transistor n-channel enhancement-mode silicon gate this twos power fet is designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ? switching times specified at 100c ? designer's data ? idss. vds(oo). vgs|th) a"d soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source-to-drain diode characterized for use with inductive loads maximum ratings MTM25N10 tmos tmos power fet 25 amperes ros(on) = a-"* ohm 100 volts rating drain-source voltae drain-gate voltage irqs " 1 mn) gate-source voltage continuous non-repetitive (tp ?. 50 us) drain current ? continuous ? pulsed total power dissipation @ tc = 25c derate above 25c operating and storage temperature range symbol vdss vdgr vgs vgsm id 'dm pd tj' tstg value 100 100 ^20 40 25 105 iso 1.2 -66 to 160 unit vdc vdc vdc vpk adc watts w/c c thermal characteristics thermal resistance ? junction to case ? junction to ambient maximum lead temperature for soldering purposes, 1/s" from case for 5 seconds r?jc ruja tl 0.83 30 300 "cam c to-204ae electrical characteristics ? (tc = 2sc unless otherwise noted) characteristic symbol min max unit off characteristics drain-source breakdown voltage (vgs = 0, id = 0-25 ma) zero gate voltage drain current gate-body leakage current, reverse (vqsr - 20 vdc, vds = o> v(br)dss idss ]gssf igssr 100 ? ? ? ? 10 100 100 100 vdc itmc nadc nadc nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. oiinlifv
electrical characteristics ? continued (tc - 25"c unless otherwise noted) characteristic symbol win max unit on characteristics* gate threshold voltage (vds = vgs. 'd = 1 m*i tj = 100c static drain-source on-resistance (vgs = 10 vdc, id = 12.5 adc) drain-source on-voltage (vqs = 10 v) (id = 25 adc| (id =? 12.5 adc, tj = 100-c) forward transconductance (vos = 10 v, id = 12.5 a) vqs(th) "ds(on) vdsionl 9fs 2 1 5 ? ? 5 4.5 4 0.075 2.25 1.8 ? vdc ohm vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance |
